november 1999 - ed : 3d specific to "freewheel mode" operations: freewheel or booster diode ultra-fast and soft recovery very low overall power losses in both the diode and the companion transistor high frequency operations insulated package : isowatt220ac electrical insulation : 2000vdc capacitance < 12 pf features and benefits the turboswitch is a very high performance series of ultra-fast high voltage power diodes from 600v to 1200v. turboswitch family, drastically cuts losses in both the diode and the associated switching igbt or mosfet in all "freewheel mode" operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control circuitries. packaged either in to-220ac, isowatt220ac or in dpak, these 600v devices are particularly intended for use on 240v domestic mains. description i f(av) 5a v rrm 600v t rr (typ) 20ns v f (max) 1.5v main products characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 600 v v rsm non repetitive peak reverse voltage 600 v i f(rms) rms forward current to-220ac isowatt220ac 20 a dpak 10 a i frm repetitive peak forward current tp=5 m s f=5khz square 65 a i fsm surge non repetitive forward current tp=10 ms sinusoidal 55 a t j maximum operating junction temperature 150 c t stg storage temperature range -65 to 150 c tm : turboswitch is a trademark of stmicroelectronics absolute ratings (limiting values) stta506d/f/b ? turboswitch ? ultra-fast high voltage diode k k a to-220ac stta506d k a isowatt220ac STTA506F k a nc dpak stta506b 1/10 ( datasheet : )
symbol parameter test conditions min typ max unit v f * forward voltage drop i f =5a tj = 25c tj = 125c 1.25 1.75 1.5 v v i r ** reverse leakage current v r =0.8 x v rrm tj = 25c tj = 125c 0.75 100 2 m a ma v to threshold voltage ip < 3.i av tj = 125c 1.15 v rd dynamic resistance 70 m w test pulse : * tp = 380 m s, d < 2% ** tp = 5 ms, d < 2% static electrical characteristics symbol parameter test conditions value unit r th(j-c) junction to case to-220ac / dpak isowatt220ac 3.5 6.0 c/w p 1 conduction power dissipation ? i f(av) = 5a d =0.5 to-220ac / dpak isowatt220ac tc= 118c tc= 96c 9w p max total power dissipation pmax = p1 + p3 (p3 = 10% p1) to-220ac / dpak isowatt220ac tc= 115c tc= 90c 10 w thermal and power data symbol parameter test conditions min typ max unit t rr reverse recovery time tj = 25c i f = 0.5 a i r = 1a irr = 0.25a i f = 1 a di f /dt =-50a/ m s v r =30v 20 50 ns i rm maximum reverse recovery current tj = 125c vr = 400v i f =5a di f /dt = -40 a/ m s di f /dt = -500 a/ m s11 3.0 a s factor softness factor tj = 125c v r = 400v i f =5a di f /dt = -500 a/ m s0.55 - dynamic electrical characteristics turn-off switching symbol parameter test conditions min typ max unit t fr forward recovery time tj = 25c i f =5 a, di f /dt = 40 a/ m s measured at 1.1 v f max 500 ns v fp peak forward voltage tj = 25c i f =5a, di f /dt = 40 a/ m s10 v turn-on switching to evaluate the maximum conduction losses use the following equation : p = v to x i f(av) + rd x i f 2 (rms) stta506d/f/b 2/10
0 50 100 150 200 250 300 350 400 450 500 0.00 0.50 1.00 1.50 2.00 2.50 p3(w) tj=125c f = 10khz vr=600v dif/dt(a/s) fig. 1: switching off losses versus di/dt. 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 irm sfactor tj(oc) fig. 6: relative variation of dynamic parameters versus junction temperature (reference tj = 125c). 0 100 200 300 400 500 600 700 800 900 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 sfactor dif/dt(a/ s) vr=400v if<2xif(av) typical values tj=125 c o fig. 5: softness factor (tb/ta) versus di f /dt. 0 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 160 180 trr(ns) dif/dt(a/ s) vr=400v if=5a if=2.5a 90% confidence tj=125 c o if=10a fig. 4: reverse recovery time versus di f /dt. 0 100 200 300 400 500 600 700 800 900 1000 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 vr=400v if=5a if=2.5a 90% confidence tj=125 c o if=10a dif/dt(a/ s) irm(a) fig. 3: peak reverse recovery current versus di f /dt. 0.1 1 10 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 tj=125 c o ifm(a) maximum values vfm(v) fig. 2: forward voltage drop versus forward current. stta506d/f/b 3/10
0 102030405060708090100 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 if=if(av) vfp(v) dif/dt(a/ s) 90% confidence tj=125 c o fig. 7: transient peak forward voltage versus di f /ft. tfr(ns) 0 102030405060708090100 0 50 100 150 200 250 300 350 400 450 500 vfr=1.1*vf max. if=if(av) 90% confidence tj=125 c o dif/dt(a/ s) fig. 8: forward recovery time versus di f /dt. fig. 10: relative cariation of thermal transient im- pedance junction to case versus pulse duration (isowatt220ac). fig. 9: relative cariation of thermal transient im- pedance junction to case versus pulse duration (to-220ac and dpak). stta506d/f/b 4/10
total losses due to the diode p = p1+ p2+ p3+ p4+ p5 watts switching losses in the diode conduction losses in the diode switching losses in the transistor due to the diode reverse losses in the diode the turboswitch is especially designed to provide the lowest overall power losses in any "freewheel mode" application (fig.a) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. the way of calculating the power losses is given below: application data fig. a : "freewheel" mode diode: turboswitch il load transistor switching t t f=1/t =t/t v r stta506d/f/b 5/10
i i f rd i r v r v to v f v fig. b : static characteristics conduction losses : p1 = v t0 . i f(av) + r d . i f 2 (rms) reverse losses : p2 = v r . i r . (1 - d ) application data (contd) turn-on losses : (in the transistor, due to the diode) p5 = v r i rm 2 ( 3 + 2 s ) f 6 x di f dt + v r i rm i l ( s + 2 ) f 2 x di f dt turn-off losses (in the diode) : p3 = v r i rm 2 s f 6 x di f dt p3 and p5 are suitable for power mosfet and igbt fig. c : turn-off characteristics di f /dt = v r /l di /dt r tb ta i rm v r i v t s=tb/ta trr = ta + tb rectifier operation v i il t transistor di /dt f di /dt r tb ta i rm vr diode i v t trr = ta + tb s = tb / ta stta506d/f/b 6/10
application data (contd) i f v f v fp 1.1v f v f f di /dt 0 0t t i fmax tfr fig. d : turn-on characteristics turn-on losses : p4 = 0.4 (v fp - v f ) . i fmax . t fr . f stta506d/f/b 7/10
package mechanical data dpak ref. dimensions millimeters inches min. max min. max. a 2.20 2.40 0.086 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.212 c 0.45 0.60 0.017 0.023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.397 l2 0.80 typ. 0.031 typ. l4 0.60 1.00 0.023 0.039 v2 0 8 0 8 6.7 6.7 6.7 3 1.6 1.6 2.3 2.3 footprint dimensions (in millimeters) cooling method : by conduction (c) stta506d/f/b 8/10
package mechanical data isowatt220ac f g f1 h d e a b l7 diam l2 l6 l3 ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 b 2.50 2.70 0.098 0.106 d 2.40 2.75 0.094 0.108 e 0.40 0.70 0.016 0.028 f 0.75 1.00 0.030 0.039 f1 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 h 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l3 28.60 30.60 1.125 1.205 l6 15.90 16.40 0.626 0.646 l7 9.00 9.30 0.354 0.366 diam 3.00 3.20 0.118 0.0126 cooling method : by conduction (c) recommanded torque value : 0.55m.n maximum torque value : 0.7m.n stta506d/f/b 9/10
package mechanical data to-220ac a c d e m l7 h2 ? i l5 l6 l9 l4 g f1 f l2 ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 h2 10.00 10.40 0.393 0.409 l2 16.40 typ. 0.645 typ. l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. i 3.75 3.85 0.147 0.151 cooling method : by conduction (c) recommanded torque value : 0.55m.n maximum torque value : 0.7m.n information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ordering type marking package weight base qty delivery mode stta506d stta506d to-220ac 1.86g 50 tube STTA506F STTA506F isowatt220ac 2g 50 tube stta506b stta506b dpak 0.3g 75 tube stta506b-tr stta506b dpak 0.3g 2500 tape & reel epoxy meets ul94,v0 stta506d/f/b 10/10
|
